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| SMD Type Silicon N-channel Power MOSFET 2SK3628 TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features High-speed switching Low ON resistance Ron + .2 8 .7 -00.2 No secondary breakdown Avalanche energy capability guaranteed +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 230 30 20 80 570 3 100 150 -55 to +150 Unit V V A A mJ W 5 .6 0 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type 2SK3628 Electrical Characteristics Ta = 25 Parameter Gate-drain surrender voltage Diode forward voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance Short-circuit output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VDSF Vth IDSS IGSS Testconditons ID = 1 mA, VGS = 0 IDR = 20 A, VGS = 0 VDS = 25 V, ID = 1 mA VDS = 184 V, VGS = 0 VGS = 30 V, VDS = 0 Transistors IC Min 230 Typ Max Unit V -1.5 1.7 3.7 100 1 65 7 14 2300 85 V V iA iA mU S pF pF pF ns ns ns ns RDS(on) VGS = 10 V, ID = 10 A Yfs Ciss Coss Crss td(on) tr td(off) tf VDD 100 V, ID = 15 A VDS = 25 V, VGS = 0, f = 1 MHz VDS = 25 V, ID = 10 A 330 30 35 26 220 36 RL = 6.7 U, VGS = 10 V 2 www.kexin.com.cn |
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